Design of an Ultra-Wideband Low-Noise Amplifier for Spin Wave Readout Circuitry in 65 nm CMOS Technology
We introduce a new approach to measure spin waves on-chip and describe the design of an ultra-wideband Low-Noise Amplifier (LNA) implemented in a readout circuitry for characterization of the spin wave devices. The LNA shows a gain of 22.6 dB in the frequency range between 9.7 GHz and 43.3 GHz. The...
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| Dokumentumtípus: | Cikk |
| Megjelent: |
2016
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| Sorozat: | 2016 16TH MEDITERRANEAN MICROWAVE SYMPOSIUM (MMS)
16 |
| Tárgyszavak: | |
| mtmt: | 3194618 |
| Online Access: | https://publikacio.ppke.hu/1826 |