Design of an Ultra-Wideband Low-Noise Amplifier for Spin Wave Readout Circuitry in 65 nm CMOS Technology
We introduce a new approach to measure spin waves on-chip and describe the design of an ultra-wideband Low-Noise Amplifier (LNA) implemented in a readout circuitry for characterization of the spin wave devices. The LNA shows a gain of 22.6 dB in the frequency range between 9.7 GHz and 43.3 GHz. The...
| Main Authors: |
Meier C Egel E Csaba György Breitkreutz-von Gamm S |
|---|---|
| Format: | Article |
| Published: |
2016
|
| Series: | 2016 16TH MEDITERRANEAN MICROWAVE SYMPOSIUM (MMS)
16 |
| Subjects: | |
| mtmt: | 3194618 |
| Online Access: | https://publikacio.ppke.hu/1826 |
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